发明名称 Method of making a rear surface incident type photodetector
摘要 A method for producing a photodetector device includes depositing a plurality of spaced apart light absorption regions at intervals on a substrate, depositing an insulating layer on the substrate and covering the light absorption regions, producing a first conductivity type semiconductor layer on the insulating layer, and producing second conductivity type semiconductor regions by selectively diffusing impurities into regions of the first conductivity type semiconductor layer until the impurities reach the insulating layer.
申请公布号 US5156980(A) 申请公布日期 1992.10.20
申请号 US19910754392 申请日期 1991.09.03
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HISA, YOSHIHIRO
分类号 H01L31/0352;H01L31/103;H01L31/18 主分类号 H01L31/0352
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