摘要 |
A method for producing a photodetector device includes depositing a plurality of spaced apart light absorption regions at intervals on a substrate, depositing an insulating layer on the substrate and covering the light absorption regions, producing a first conductivity type semiconductor layer on the insulating layer, and producing second conductivity type semiconductor regions by selectively diffusing impurities into regions of the first conductivity type semiconductor layer until the impurities reach the insulating layer.
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