发明名称 |
Method for forming a mask pattern for contact hole |
摘要 |
A method for forming a mask pattern for contact hole in a highly integrated semiconductor device is disclosed. The method according to the invention utilizes a SOG film in order to form an accurate and compact mask pattern for the formation of a contact hole within the highly limited area at a predetermined semiconductor layer where a sizable step difference exists. The method according to the invention is also applicable for manufacturing a multi-layered highly integrated semiconductor device.
|
申请公布号 |
US5157002(A) |
申请公布日期 |
1992.10.20 |
申请号 |
US19900619033 |
申请日期 |
1990.11.28 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
MOON, SEUNG C. |
分类号 |
H01L21/3213;H01L21/027;H01L21/308;H01L21/311;H01L21/768 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|