| 摘要 |
The method for mfg. a mask comprises (a) coating an opaque mask plate and a photosensitive film on the transparent substrate, (b) exposing the fixed part of the plate by light-exposing and developing the fixed part of the film, (c) exposing the fixed part of the substrate by etching the exposed part of the plate, (d) forming the pattern region by etching the substrate, (e) forming a phase shift region of 0.2-0.3 m width side-etching the plate, and (f) removing the film. The mask improves the resolution of patterns. |
