METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING MULTI-GATE TYPE TRANSISTORS

摘要

In manufacturing multi-gate mask ROM (MUGROM) with multi-gate type MOS TR structure, the first and second electrode layers (13,15) which are arrayed on a channel region (20) between drain and source regions (1) and (2) of a substrate (10), the method comprises ion-implanting impurities into the channel (20) to form several gate electrode layers (13) on the channel at constant intervals, forming several gate electrode layers (15) between the layers (13) on the channel such that the edges of the layers (15) cover over the edges of the layers (13) and selectively ion-implanting impurities into the enhancement channel region, thereby being self-aligned by the neighboring gate electrode layer.