| 摘要 |
PURPOSE:To prevent current leak at electrode isolating sections between a plurality of electrodes by removing a contact layer to expose a clad layer and then forming a polyimide layer. CONSTITUTION:The optical semiconductor device is constituted of an absorption layer 8 and a clad layer 10 in stripe structure, and a high resistance buried layer 12 on the side face thereof. An optical modulator section electrode 14 and a laser section electrode are provided to be connected through a contact layer 11 with the clad layer 10. A polyimide layer 20 is formed between the optical modulator section electrode 14, the laser section electrode and the high resistance buried layer 12. The polyimide layer 20 is also formed at an electrode isolating part between the optical modulator electrode 14 and the laser section electrode. The polyimide layer 20 has substantially vertical side face above the border between the clad layer 10 and the high resistance buried layer 12 and has inclining side face at other parts. According to the constitution, current leak is prevented at electrode isolating parts between a plurality of electrodes. |
