| 摘要 |
PURPOSE:To easily remove an organic resin layer such as resist by applying a stress to an organic resin layer such as resist. CONSTITUTION:A spacer layer 2 of SiO2 is formed on a GaAs semiconductor substrate crystal 1, a photoresist pattern 3 is then formed by the photolithography process, holes are bored on the SiO2 film and thereby an AuGe group metal layer 4 for ohmic electrode is deposited. Thereafter, cracks and peelings are generated at the surface of the photoresist 3 in the side of semiconductor crystal 1 when the semiconductor crystal substrate 1 is cooled upto the temperature near the liquid nitrogen and then dried under the room temperature, because a large deforming stress is applied to the photoresist 3 through the temperature cycle of cooling and drying processes. Such change of condition is convenient for successive lift-off process and the unwanted photoresist layer 3 and metal layer 4 can be removed easily by the cleaning and removing process using a solution. |
