| 摘要 |
PURPOSE: To present a means for preventing a gate diode leakage current that is generated at the trench upper edge part in a field plate insulation type DRAM with a trench type capacity in terms of structure. CONSTITUTION: By performing ion implantation of an impurity, at a second angle 57 larger than a first angle, to an area near the upper edge part of an N-carrier accumulating region 50 that is formed by performing the ion implantation of an impurity (n-type), at a certain first angle 59, to the sidewall surface of a trench 16 punched in a semiconductor substrate 48 by etching. The doping concentration at this region is further increased, thus effectively preventing the leakage of electric charges from the region to the semiconductor substrate 48. |
