| 摘要 |
<p>PURPOSE:To present an active matrix substrate reducing the generation of connection defect between the drain electrode of a thin film transistor and a picture element elerctrode and further reducing the area of a part occupied by additional capacitance for holding video signals. CONSTITUTION:Thin film transistors 25a and 25b are equipped with thin multi- crystal silicon films 30 equipped with channel layers 12a and 12b and drain electrodes 24, gate insulation films 13 on the thin films 30 and gate electrodes 3a and 3b on the gate insulation films 13. A picture element electrode 4 and the drain electrode 24 are electrically connected by metal constituting a metal layer 10 filling a first contact hole 9a formed at a first inter-layer insulation film 14 and ITO constituting the picture element electrode 4 filling a second contact hole 9b formed at a second inter-layer insulation film 17. Further, the metal layer 10 is used as one electrode of an additional capacitor 27.</p> |
