发明名称 ACTIVATOR OF SUBSTRATE POTENTIAL GENERATION CIRCUIT
摘要 PURPOSE:To provide a title device which prevents the malfunction of semiconductor devices by giving proper substrate potentials even when this device built in a semiconductor device has special control clocks such as for a multiport DRAM. CONSTITUTION:A semiconductor device with a built in substrate potential generation circuit 5 comprises a control clock frequency discriminating circuit 7 which judges whether or not the repetition frequency of the control clock SC of a semiconductor device is over a predetermined value, so as to activate the substrate potential generation circuit 5 when the repetition frequency of the control clock SC is over the predetermined value.
申请公布号 JPH04291756(A) 申请公布日期 1992.10.15
申请号 JP19910056887 申请日期 1991.03.20
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 FURUYAMA TAKAAKI
分类号 G11C11/408;G11C11/401;G11C11/407;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H03K19/096 主分类号 G11C11/408
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