发明名称 |
ACTIVATOR OF SUBSTRATE POTENTIAL GENERATION CIRCUIT |
摘要 |
PURPOSE:To provide a title device which prevents the malfunction of semiconductor devices by giving proper substrate potentials even when this device built in a semiconductor device has special control clocks such as for a multiport DRAM. CONSTITUTION:A semiconductor device with a built in substrate potential generation circuit 5 comprises a control clock frequency discriminating circuit 7 which judges whether or not the repetition frequency of the control clock SC of a semiconductor device is over a predetermined value, so as to activate the substrate potential generation circuit 5 when the repetition frequency of the control clock SC is over the predetermined value. |
申请公布号 |
JPH04291756(A) |
申请公布日期 |
1992.10.15 |
申请号 |
JP19910056887 |
申请日期 |
1991.03.20 |
申请人 |
FUJITSU LTD;FUJITSU VLSI LTD |
发明人 |
FURUYAMA TAKAAKI |
分类号 |
G11C11/408;G11C11/401;G11C11/407;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H03K19/096 |
主分类号 |
G11C11/408 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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