| 摘要 |
<p>PURPOSE:To provide a manufacture of easily manufacturing a highly reliable semiconductor ceramic element of positive temperature coefficient which does not cause the discharge or the short circuit between electrode films due to migration of silver being contained in an electrode film in few manufacturing processes. CONSTITUTION:This is a manufacture of a positive semiconductor ceramic element where electrode films constituted by electrode materials 13 and 13 each containing silver are made at opposed both main faces of the semiconductor ceramic elements 12 consisting of the semiconductor ceramic materials having positive resistance- temperature coefficient and the side faces positioned between opposed main faces of the above semiconductor ceramic element 12 are covered with enamel. For the electrode materials 13 and 13, which are applied severally on opposed both main faces of the above semiconductor ceramic element 12 and are dried and include silver, and the enamel 17, which is applied on the sides 19 between above both main faces of the semiconductor ceramic element 12, the baking temperatures are approximately the same, and the above enamel 17 is baked against the semiconductor ceramic element 12 at the same time with the baking of the electrode materials 13 and 13.</p> |
