发明名称 SILICON WAFER POLISHING METHOD
摘要 PURPOSE:To obtain a silicon wafer which does not generate any haze by supplying a nonionic surface-active agent having HLB value in the particular range or a particular anionic surface-active agent together with alkali colloidal silica or a powder silica polishing solution which is dispersed in water at the time of polishing a silicon wafer. CONSTITUTION:The nonionic surface-active agent used is required to have the HLB value of 13.0 or higher but under 20.0. As the anionic surface-active agent, suphonic acid salt type, sulfurnic acid ester salt type, calboxylic acid salt type and phosphoric acid ester salt type agent are used. When the surface-active agents are supplied together, the concentration thereof on the polisher is desirably 10ppm to 1wt.% aqueous solution in terms of the total amount of effective component of the solid matter of alkali colloidal silica or powder silica which is dispersed in water. The amount of coexistence of surface-active agents is desirably about 0.01 to 1.0wt times for the supplied amount of alkali colloidal silica or powder silica.
申请公布号 JPH04291724(A) 申请公布日期 1992.10.15
申请号 JP19910056745 申请日期 1991.03.20
申请人 ASAHI DENKA KOGYO KK 发明人 HIRATSUKA ICHIRO;TAKAHATA TADAO;TADA SHUICHI;KUNO JUNICHI;AZUMI TAKAYOSHI;KONISHI MASANORI
分类号 B24B37/00;C09K3/14;H01L21/304 主分类号 B24B37/00
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