| 摘要 |
PURPOSE:To allow the elimination of alignment and electron beam plotting, the improvement in throughput and the formation with good reproducibility and to improve the yield of non-defective reticules. CONSTITUTION:Patterned level differences 1a are formed on a substrate 1 by forming a 1st film 2 on the substrate 1, etching the 1st film 2 to form patterned 1st film patterns 2a on the substrate 1, forming a 2nd film 3 so as to cover the 1st film patterns 2a, anisotropically etching the 2nd film 3 to form side wall films 3a on the side walls of the 1st film patterns 3a, etching the substrate 1 with the 1st film patterns 2a and the side wall films 3a as a mask, and further removing the side wall films 3a. |
