发明名称 PROCESS FOR PREPARATION OF A SEED LAYER FOR SELECTIVE METAL DEPOSITION
摘要 <p>Disclosed is a process for selective metal deposition comprising of the steps of: a) formation of an initial surface on a substrate (32), said initial surface being comprised of at least two layers of which the uppermost is inert, b) exposing the surface to a source of heat in pre-determined places where surface activation is desired, and c) deposition of metal (36) on activated portions of said surface.</p>
申请公布号 WO1992017627(A1) 申请公布日期 1992.10.15
申请号 US1992002437 申请日期 1992.03.31
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