| 摘要 |
PURPOSE:To obtain the resistor not requiring an occupied area nearly at all by using a thin film of retarded conductivity such as a nitride or oxide of Si held by two conductors between as a resistor when the resistor to be used for IC is prepared. CONSTITUTION:On the surface layer of an Si substrate 1 which is the 1st conductive type is formed a diffusion region 2 which is the 2nd conductive type and the whole surface including the region 2 is convered with an insulation film 3. Next, an opening is made in the film 3 so as for it to correspond to a prescribed position in the region 2 and the thin film 7 of retarded conductivity, constituted by Si3N4, SiO2 or the like, is connected to the side wall and bottom surface of the opening with an overhang to the edge part of the opening, and the film 7 is used as the desired resistor. After that, an electrode 4 is pushed into the opening, and the resistor is formed of the thin film 7 held by the electrode 4 and the diffusion region 2 between. In this way, the area occupied by the device is turned extremely small and also it becomes possible to obtain very high resistance. |
