发明名称 |
Method for making a silicide layer by ionic implantation and semi semiconductor device thereby produced. |
摘要 |
<p>Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer 91. The silicide preferably is CoSi2 or TiSi2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e.g., < 0.5 mu m) channel CMOS devices. <IMAGE></p> |
申请公布号 |
EP0508679(A1) |
申请公布日期 |
1992.10.14 |
申请号 |
EP19920302887 |
申请日期 |
1992.04.02 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
AUDET, SARAH ANNE;RAFFERTY, CONOR STEFAN;SHORT, KENNETH THOMAS;WHITE, ALICE ELIZABETH |
分类号 |
H01L21/28;H01L21/265;H01L21/285 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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