发明名称 |
Method of making ohmic contact to a III-V semiconductor device. |
摘要 |
<p>Disclosed is a method of making a semiconductor device that comprises depositing a Ti/Pt layer onto an Au-containing intermediate layer (941) on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto an Au-containing intermediate layer (951 ) on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425-500 DEG C for 10-100 seconds.</p> |
申请公布号 |
EP0508618(A2) |
申请公布日期 |
1992.10.14 |
申请号 |
EP19920302306 |
申请日期 |
1992.03.18 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
DAUTREMONT-SMITH, WILLIAM CROSSLEY;KATZ, AVISHAY;KOSZI, LOUIS ALEX;SEGNER, BRYAN PHILLIP;THOMAS, PETER MCLEAN |
分类号 |
H01L21/285;H01L29/45;H01L33/24;H01L33/30;H01L33/40;H01S5/00;H01S5/042;H01S5/223;H01S5/24 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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