| 摘要 |
<p>A material layer such as a metal layer, a dielectric layer, a semiconductor layer or a superconducting layer is deposited by the liquid-phase thermal decomposition of a metal-organic precursor dissolved in an anhydrous organic solvent. The organic solvent solvent has a chemical polarity corresponding to the selected metal-organic precursor and has a normal boiling point above the decomposition temperature of the selected precursor. The present invention enables the use of a wide variety of molecular compositions which can be used for the formation of an equally wide variety of material layers. In one embodiment of the invention, a semiconductor substrate (12) is subjected to a liquid mixture comprising a metal-substituted heterocyclic acetylacetonate precursor dissolved in tetradecane (b.p. 254 DEG C). Depending upon the structure of the acetylacetonate, either a metal or a metal oxide film is deposited in the liquid phase on a semiconductor substrate (12) immersed in a solution which is maintained at the decomposition temperature of the acetylacetonate precursor. <IMAGE></p> |
