| 摘要 |
An aluminum layer formed over a semiconductor integrated circuit. A metal layer is formed over the aluminum layer, and both are etched to define a conductive signal line. Another metal layer is deposited and etched back to form a sidewall metal regions, so that the aluminum in the conductive signal line is surrounded on the top and sides. The metallic layer used to form the sidewall regions can be selectively deposited to minimize the amount of etchback required. In the resulting structure, the metal side and top layers contain the aluminum in the signal line, and therefore help prevent problems caused by aluminum electromigration. <IMAGE> |
