| 摘要 |
PURPOSE:To improve a light emitting efficiency by providing a light reflecting layer between a substrate and a semiconductor light emitting layer in a light emitting diode having a structure which can be monolithically integrated with a switching element. CONSTITUTION:In a surface light emitting type light emitting diode in which p-type and n-type electrodes 5, 6 can be integrated on the same main surface of a substrate in a two-dimensional manner, a light reflecting layer made of alkali earth metal.fluorine compound 2 is formed, and a p-n junction made of a first conductivity type semiconductor crystalline layer 3 and a second conductivity type semiconductor crystalline layer 4 is fanned thereon. In this case, a structure in which a forward current flows between the electrodes 5 and 6 and a light emitted near the junction is reflected by the compound 2 having a low refractive index so that the light is scarcely propagated to the board side, is formed. |
