发明名称 SEMICONDUCTOR DEVICE HAVING LOW SOURCE INDUCTANCE
摘要 A semiconductor device having a low source inductance are fabricated by having a maximum of two sources each in contact with a region which makes contact to a substrate or back side of the device. The back side source contact also allows the device to be mounted directly to a grounded heatsink.
申请公布号 US5155563(A) 申请公布日期 1992.10.13
申请号 US19910670654 申请日期 1991.03.18
申请人 MOTOROLA, INC. 发明人 DAVIES, ROBERT B.;JOHNSEN, ROBERT J.;ROBB, FRANCINE Y.
分类号 H01L29/78;H01L21/74;H01L29/10;H01L29/417 主分类号 H01L29/78
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