发明名称 Semiconductor memory device
摘要 The substrate current generated during the operation of a bit line equalizer can be reduced by adapting PMOS transistors which have a smaller ionization coefficient in its carrier of a hole than NMOS transistors for maintaining a pair of bit lines at the same potential before a sense amplifier is operated. Thus, the substrate voltage can be stabilized by reducing the substrate current in the operation of the bit line equalizer.
申请公布号 US5155702(A) 申请公布日期 1992.10.13
申请号 US19900617628 申请日期 1990.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN, DONG S.
分类号 G11C7/12;G11C11/4094 主分类号 G11C7/12
代理机构 代理人
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