发明名称 FINE WIRE WIDTH PATTERN FORMATION METHOD, EXPOSURE DEVICE AND COMBINATION STRUCTURE
摘要 PURPOSE: To form a pattern with an extremely thin line width on an insulating substrate. CONSTITUTION: A device has a conductive sharp chip 10, that is connected to a conductive spring cantilever spring 12. Electrons emitted from the sharp chip 10 move to the surface of an insulating substrate 24 and cause a change or affect molecules that approach the insulator surface. No tunnel current is required, and no highly conductive return current path for electrons that pass the insulating substrate is required as well. Incidence electrons change and they deposit a material onto the insulating substrate, etch the local region on the surface of the insulating substrate, or etch the surface of the insulating substrate, thus providing a patterned thin line width.
申请公布号 JPH04288815(A) 申请公布日期 1992.10.13
申请号 JP19910212656 申请日期 1991.07.30
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 RODONII TOREBUAA HATSUJISON;JIYAKUSON EDOWAADO SUTANRANDO;ORIBUAA KUREIGU UERUZU
分类号 H01L21/027;B41M5/20;G01Q30/20;G01Q80/00;G03F7/00;G11B9/00;H01J37/317;H01L21/203;H01L21/205;H01L21/30;H01L21/302 主分类号 H01L21/027
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