发明名称 |
FINE WIRE WIDTH PATTERN FORMATION METHOD, EXPOSURE DEVICE AND COMBINATION STRUCTURE |
摘要 |
PURPOSE: To form a pattern with an extremely thin line width on an insulating substrate. CONSTITUTION: A device has a conductive sharp chip 10, that is connected to a conductive spring cantilever spring 12. Electrons emitted from the sharp chip 10 move to the surface of an insulating substrate 24 and cause a change or affect molecules that approach the insulator surface. No tunnel current is required, and no highly conductive return current path for electrons that pass the insulating substrate is required as well. Incidence electrons change and they deposit a material onto the insulating substrate, etch the local region on the surface of the insulating substrate, or etch the surface of the insulating substrate, thus providing a patterned thin line width. |
申请公布号 |
JPH04288815(A) |
申请公布日期 |
1992.10.13 |
申请号 |
JP19910212656 |
申请日期 |
1991.07.30 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
RODONII TOREBUAA HATSUJISON;JIYAKUSON EDOWAADO SUTANRANDO;ORIBUAA KUREIGU UERUZU |
分类号 |
H01L21/027;B41M5/20;G01Q30/20;G01Q80/00;G03F7/00;G11B9/00;H01J37/317;H01L21/203;H01L21/205;H01L21/30;H01L21/302 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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