THRESHOLD VOLTAGE GENERATING CIRCUIT

摘要

A semiconductor integrated circuit (1) is provided therein with a current mirror circuit comprising a first transistor (Q4) through which a reference current flows from a current source (15) connected with one electrode of the first transistor (Q1) and a second transistor (Q5) which supplies a current responsive to the ratio of first and second external resistors (20, 21) connected with other electrodes of the first and second transistors (Q4, Q5) on the basis of the reference current. The current from the second transistor (Q5) flows through an internal resistor (16) connected with one electrode of the second transistor (Q5), so that a threshold voltage is generated across the internal resistor (16). The threshold voltage can be arbitrarily set in accordance with the ratio of the first and second external resistors (20, 21). Further, manufacturing dispersion of the integrated circuit can be cancelled when the current from the current source (15) provided in the integrated circuit (1) is converted into a voltage by the internal resistor (16).