METHOD FOR FORMING FILM OF UNIFORM THICKNESS ON SEMICONDUCTOR SUBSTRATE HAVING CONCAVE PORTION,申请号US19910656725-传众专利搜索

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发明名称	METHOD FOR FORMING FILM OF UNIFORM THICKNESS ON SEMICONDUCTOR SUBSTRATE HAVING CONCAVE PORTION
摘要
申请公布号	US5155060(A)	申请公布日期	1992.10.13
申请号	US19910656725	申请日期	1991.02.19
申请人	MITSUBISHI DENKI KABUSHIKI KAISHA	发明人	IKENO, MASAHIKO;SAEKI, HIDEO;KAWASHIMA, HIROSHI
分类号	H01L21/312;H01L27/148;H01L31/0216	主分类号	H01L21/312
代理机构		代理人
主权项
地址

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