MANUFACTURE OF FIELD EFECT TRANSISTOR AND BIPOLAR TRANSISTOR STRUCTURE, MANUFACTURE OF INTEGRATED CIRCUIT, MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR STRUCTURE

摘要

PURPOSE: To provide a method for producing an integrated circuit having both a field-effect transistor(FET) and a bipolar transistor(BipT). CONSTITUTION: A polyside film is formed on a gate oxide film 205a and a field oxide film 205b formed on the surface of a semiconductor substrate, and while forming the gate of an FET by patterning at a single step, gate material protection structure is formed on the upper part of the base area of a BipT. The channel area of the FET is delimited by the gate and used as a mask for removing the gate oxide film 205a from a source area 212a and a drain area 212b by etching. Ions are injected to form the source and drain of the FET and the collector contact 212c of the BipT. The gate material protection structure on the active area of the BipT is removed by the injection of ions just before forming a base 215. The emitter of the BipT can be obtained by a patterned polysilicon layer 218 or a polycide thin film.