| 摘要 |
PURPOSE:To manufacture a semiconductor device of high reliability with high yield. CONSTITUTION:When SiN films 13, 17, 33, 35 as the capacitor insulating film of a DRAM and the stopper at the time of wet etching and polycrystalline Si films 25, 31, 32, 34 being conductor films are formed by low pressure CVD, these films are deposited also on the rear side of an Si substrate 21. After these films on the rear side are eliminated by etching or grinding, annealing in a hydrogen atmosphere is performed in order to recover interface level. |
