| 摘要 |
PURPOSE:To widen the selectable range of substrate materials by forming an amorphous silicon film having a photoconductivity to dark conductivity ratio higher than a prescribed value on a high polymer substrate. CONSTITUTION:A material prepared by vaporizing a material containing at least silicon and another material prepared by introducing one or two kinds of materials selected out of H2, SiH4, halogen, and noble gas into plasma are introduced into the same chamber and a thin film containing such materials is formed on a substrate 3. The photoconductivity (sigmap) to dark conductivity (sigmad) ratio of the formed amorphous silicon film becomes >=10<3>, with >=10<4> being preferable. In addition, the hydrogen coupled form in the film is such that the SiH2/SiH ratio becomes >=1.0. The sigmap of a preferable hydrogen coupled form is >=22X10<-7>s.cm<-2>. |
