发明名称 MANUFACTURE OF LOW PERMITTIVITY HYBRID MULTILAYER CERAMIC WIRING BOARD
摘要 PURPOSE:To simultaneously realize a high speed transmission and high density miniature interconnection by forming miniature multilayer interconnections by using a ceramic composition having low permittivity and in which low temperature sintering can be performed. CONSTITUTION:When a conductor is formed in the case of manufacturing a low permittivity hybrid multilayer ceramic wiring board, 2-layer films 10, 11 of Ti and Pd are first adhered by sputtering, coated with photoresist 12, exposed, developed and formed with a mask pattern. On the other hand, when an insulating layer is formed, photoset insulating layer paste 14 is screen printed, dried on Au interconnection 13, a viahole pattern is exposed and developed by using a mask 15. Further, conductor paste is buried to be supplemented in the viahole. Thereafter, an insulating layer 17 having a viahole 16 is formed by firing. Further, in order to form multilayer interconnections, a conductor forming process and an insulating layer process are repeated. A chip mounting top metal layer is formed, and several LSI chips are placed thereon.
申请公布号 JPH04286149(A) 申请公布日期 1992.10.12
申请号 JP19910049644 申请日期 1991.03.14
申请人 NEC CORP 发明人 HO KEIICHIRO;KOBAYASHI YOSHINOBU;SHIMADA YUZO
分类号 H01L23/538;H01L21/48;H05K3/10;H05K3/38;H05K3/46 主分类号 H01L23/538
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