发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PURPOSE:To reduce the effective area of each conductor, and increase the level of integration, by arranging a second conductor around a first conductor via insulator in a capacitor. CONSTITUTION:Around polycrystalline silicon 30 as a first conductor turning to one electrode of a capacitor, polycrystalline silicon 13, 31 as a second conductor turning to the other electrode is arranged via insulating films 15, 32 as insulator, thereby constituting a capacitor. That is, by arranging the other electrode so as to cover the one electrode, the effective area of the capacitor is increased. When the polycrystalline silicon 13 has the same shape as the conventional one, the effective area of the capacitor becomes two times or more. Thereby a 16MDRAM can be easily realized, when the design ratio of, e.g. a 4MDRAM is proportionally reduced and applied to the 16DRAM as it is.
申请公布号 JPH04287364(A) 申请公布日期 1992.10.12
申请号 JP19910052436 申请日期 1991.03.18
申请人 NIPPON STEEL CORP 发明人 SATO YASUO
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
代理机构 代理人
主权项
地址