| 摘要 |
PURPOSE:To obtain a molding die which can manufacture a resin-sealed semiconductor device in which dielectric breakdown strength is improved. CONSTITUTION:A protrusion 14 abutting against the surface of a metal heat dissipating plate 1 is formed on a die (upper die) 11 disposed at a front surface side of the plate 1 which places a semiconductor chip 2, and a gate port 15 for injecting resin in a cavity 13 and a rectification block 16 for generating injection pressure to the plate 1 by controlling the flow of the injected resin are provided at a die (lower die) 12 disposed at its opposite side. The plate 1 is stably supported in the cavity by the injection pressure of the resin and the portrusion 14. |
