| 摘要 |
<p>PURPOSE:To obtain resist patterns having high accuracy even if high-energy rays are used. CONSTITUTION:The resist contg. a base resin contg. a hydroxyl group, an acid generator which generates sulfonic acid by receiving the irradiation of radiations, a crosslinking agent which crosslinks the base resin by reacting with the hydroxyl group of the base resin by the catalytie effect of proton of the sulfonicated is applied on a substrate 1. The resist is selectively irradiated with the radiations, by which the resist is divided to exposed parts and unexposed parts and the sulfonic acid is generated in the resist of the exposed parts. The resist is heated to a 1st temp in orker to crosslink the irradiated part of the resist. The resist is heated to a 2nd temp. and is exposed to the atmosphere of a silylating agent, by which the surface of the exposed parts of the resist are silylated. The resist is dry developed by oxygen plasma.</p> |
