| 摘要 |
<p>PURPOSE:To detect the defect of a thin film transistor (TFT) before an assembling process of a liquid crystal display device by short-circuiting a drain electrode of the TFT in a manufacturing process, and applying voltage data to the short-circuited drain electrode. CONSTITUTION:On the way of a manufacturing process, a drain electrode of a TFT is short-circuited by a short circuit line 12a, voltage data is applied to its drain electrode, and the TFT having a defect is detected by current data or voltage data which flows in a source signal line 9 or a gate signal line 5. For instance, in the case there is a leak between a gate and a drain of the TFT and when the capacity leaks, a current flows through the gate signal line 5, therefore, it is detected by an ammeter or a voltmeter connected to a gate signal output pad. Also, in the case there is a leak between the source and the drain of the TFT, the current flows through the source signal line 9 therefore, it is detected by an ammeter or a voltmeter connected to a source signal output pad.</p> |
