| 摘要 |
PURPOSE:To provide a semiconductor device having a MOS structure and a manufacturing method thereof in which a channel length can be sufficiently shortened and a short-channel effect can be suppressed without reducing a junction depth of source/drain region. CONSTITUTION:A first conductivity type semiconductor substrate 1, a second conductivity type drain region 4 formed on the substrate 1, a gate insulating film 15 formed on the top of the region 4 through a first conductivity type channel forming region, an insulating film 5 formed in contact with the channel forming region on the substrate 1 and having a predetermined thickness, and a second conductivity type source region 10 formed in contact with the channel forming region on the film 5, are provided. |
