| 摘要 |
PURPOSE:To prevent the lowering of gate breakdown strength at the end section of a semiconductor thin-film used as the channel region of a thin-film transistor and the deterioration in the electrical characteristics of the thin-film transistor. CONSTITUTION:The gate electrode 3, gate insulating film 4, polycrystalline Si film 5 for forming a channel region and Si3N4 film 6 of a thin-film transistor are formed successively, at least the Si3N4 film 6 is patterned in the shape of the thin-film transistor, and the polycrystalline Si film 5 is oxidized by using the patterned Si3N4 film 6 as an oxidizing mask. An SiO2 film 8 is shaped around the polycrystalline Si film 5, thus preventing the lowering of gate breakdown strength at the end section of the polycrystalline Si film 5. The surface of the polycrystalline Si film 5 in a section covered with the Si3N4 film 6 is not oxidized, and no partial increase of the quantity of oxidation on the surface of the film 5 is generated, thus preventing the deterioration of the electrical characteristics of the thin-film transistor. |
