| 摘要 |
PURPOSE:To prevent a semiconductor light-emitting element from being deteriorated by a method wherein in the semiconductor light-emitting element having a mesa part, the distortion of a semiconductor layer, which is generated by a difference between the thermal expansion coefficient of an insulating film for current constriction use on the mesa part and the thermal expansion coefficient of the semiconductor layer, is prevented from being generated. CONSTITUTION:In a semiconductor light-emitting element, which has a mesa part and has an insulating film 19 for current constriction use and an electrode 17, which are formed on a semiconductor layer 16 of said mesa part, the electrode 17 is laminated on the above layer 16 and the above film 19 is formed on said electrode 17. Moreover, as the manufacturing method of the light- emitting element, there is a method wherein the electrode 17 is laminated on the semiconductor layer 16, then, the mesa part is formed by a vapor phase etching method, then, the insulating film 19 for current constriction use is formed on said mesa part. |
