| 摘要 |
PURPOSE:To manufacture the title compact and highly reliable semiconductor device by a method wherein at least a part of the surface of a semiconductor chip is covered with an insulating film; a bonding pad is re-wired to the surface of the insulating film; and then an inner lead is connected to the bonding pad by direct junctioning step. CONSTITUTION:At least one bonding pad 10 is re-wired to an element region of a semiconductor chip 1 through the intermediary of an insulating layer 7 while the inner leads 2 of a lead frame extending over said bonding pad 10 are connected by direct junctioning step. For example, the whole surface containing the active element region of the semiconductor chip 1 is covered with the polyimide resin film 7 while the re-arrayed wiring 11 containing the re-arrayed electrode 10 is re-arrayed on the active element region so that the polyimide resin film 7 may be connected to the other bonding pad 12 via through hole h made in the polyimide film 7. On the other hand, the ends of the inner leads 2 are directly junctioned with the re-arrayed electrode 10 by a bump 6 while the outer side is coated with a sealing resin 9. |
