APPLICATION METHOD FOR METAL LAYER OF SEMICONDUCTOR

摘要

The method for forming a metallic wiring film on a contact hole without increasing the contact resistance and leakage current comprises the steps of forming an impurity implantation region (2) into a substrate (1) to form an insulation film (3) on the substrate, removing a given region of the film (3) to form a contact hole (20) on the region (2), forming a titanium film (14) in the contact hole and on the film (3), forming a titanium silicide film (15) into the contact hole by using a self-aligning process, selectively applying a tungsten film (16) on the film (15) by chemical deposition method and forming a metallic film (17) on the films (3,16). The method improves the step coverage of metallic wirings.