The oxide cathode is manufactured by forming an electron emission material layer on the Ni-base metal by the spray method, and coating a tungsten-iridium (W-Ir) alloy (wt.% ratio of 90-60:10-40) on the layer to form a metal-coated layer of 1000-20000 angstroms by maintaining it under the vacuum or hydrogen atmosphere at 1100-1250 deg.C for 5-360 min. The oxide cathode has a high current density and a long life.
申请公布号
KR920008786(B1)
申请公布日期
1992.10.09
申请号
KR19900005279
申请日期
1990.04.16
申请人
SAMSUNG ELECTRON DEVICES CO., LTD.
发明人
OH, JONG - HO;JONG, JONG - IN;NO, HWAN - CHOL;CHOE, JONG - SO;JU, KYU - NAM