发明名称 CATHODE
摘要 The oxide cathode is manufactured by forming an electron emission material layer on the Ni-base metal by the spray method, and coating a tungsten-iridium (W-Ir) alloy (wt.% ratio of 90-60:10-40) on the layer to form a metal-coated layer of 1000-20000 angstroms by maintaining it under the vacuum or hydrogen atmosphere at 1100-1250 deg.C for 5-360 min. The oxide cathode has a high current density and a long life.
申请公布号 KR920008786(B1) 申请公布日期 1992.10.09
申请号 KR19900005279 申请日期 1990.04.16
申请人 SAMSUNG ELECTRON DEVICES CO., LTD. 发明人 OH, JONG - HO;JONG, JONG - IN;NO, HWAN - CHOL;CHOE, JONG - SO;JU, KYU - NAM
分类号 H01J1/14;(IPC1-7):H01J1/14 主分类号 H01J1/14
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