MANUFACTURE OF SEMICONDUCTOR THICK FILM

摘要

PURPOSE:To enable a method for forming a thick film exceeding 0.2mum of a stable CuInSe2 semiconductor with an improved adhesion property to be developed by improving a conventional method for forming a CuInSe2 film directly on an Mo film of a glass substrate with the Mo film without forming a third metal layer such as a Ga layer. CONSTITUTION:After performing lamination formation of Cu by 250A on a glass plate 1 which has an Mo film 2 with a thickness of 1mum and then In by 550A on it using the high-vacuum metal deposition method, it is placed within a furnace with an Se source, is heated at 400 deg. and then is subjected to selenium reaction under Se gas environment, thus forming a CuInSe2 film 3 with a thickness of 200A with an improved adhesion property on the Mo film.