VORRICHTUNG ZUR ZUECHTUNG VON KRISTALLEN AUS HALBLEITERMATERIALIEN.

摘要

An apparatus for growing a semiconductor crystal from a melt includes a susceptor (12), a quartz crucible (14), at least one reinforcing ring (24), and a heater (20). The crucible (14) is housed in the suscector (12) for receiving a semiconductor material therein. The reinforcing ring (14) is provided on the quartz crucible (14) for enhancing the strength of the crucible (14). The heater (20) is disposed so as to surround the suspector (12) for heating the semiconductor material contained in the crucible (14).