| 摘要 |
PURPOSE:To obtain a vapor growth of a semiconductor of a III-V group compound wherein a chrome is added or a mixed crystal thereof by carrying a vapor of chromyl chloride with inert gas such as N2 or the like and adding it to a reaction gas. CONSTITUTION:A semi-insulating GaAs substrate 1 is placed on a stand 2 to substitute a reaction tube 3 with H2. After heating a Ga source 5 saturated with As and a substrate 1 at 850 deg.C and 750 deg.C respectively, an H2 gas 6 including an AsCl2, an H2 gas 7 and an H2 gas including CrO2Cl2 are introduced therein to obtain the vapor growth of the chrome addition GaAs. Then, n<+>-GaAs is laminated exchanging the gas 8 to N2 and the gas 7 to H2 including an H2S. According to this method, a volatile CrO2 resulted from a high temperature decomposition of the CrO2Cl2 can be added into a reaction gas as it is, and the semi-insulating and the semiconductor of the III-V group compound wherein a chrome is added or its mixed crystal can be surely formed with the aid of the vapor growth. The characteristics of the GaAs device thus obtained is very uniform and its yield is extremely high. |
