发明名称 |
High voltage charge pumps. |
摘要 |
<p>A charge pump circuit for use in electrically erasable programmed read-only memories is described herein. The charge pump uses a single clock signal, a voltage feedback arrangement to allow a DC voltage to pass a DC voltage, and a plurality of transistors, each transistor being coupled in series with each grounded-gate transistor, eliminating reverse-breakdown voltage loads on the grounded gate transistors. <IMAGE></p> |
申请公布号 |
EP0507502(A2) |
申请公布日期 |
1992.10.07 |
申请号 |
EP19920302635 |
申请日期 |
1992.03.26 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
SANDHU, BAL;LEUNG, FREDERICK K. |
分类号 |
G11C17/00;G11C16/06;H03K17/06;H03K17/693 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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