| 摘要 |
PURPOSE:To provide a quantum fine wire structure body capable of controlling a width of a quantum fine wire at an atomic level. CONSTITUTION:A strain superlattice layer 10 having first, second semiconductor crystalline layers 11, 12 having different lattice constants is laminated on a substrate 5 in a first step of a manufacturing method according to this invention. In next second step, a strain modulation layer 20 having third, fourth semiconductor crystalline layers 23, 24 to be formed with a quantum well is crystal grown on sections 5a, 10a to cross the crystal grown layer of the layer 10. In this case, the layer 20 receives a strain responsive the lattice constants of the layers 11, 12 present on the section 10a, and is operated as a periodic quantum well for confining carrier in the same crystal grown surface. That is, the type of the semiconductor for forming the strain superlattice layer and the strain modulation layer is suitably selected to form a quantum fine wire in the modulation layer with excellent controllability. |
