| 摘要 |
PURPOSE:To offer the manufacturing method of a semiconductor acceleration sensor, which consists of a semiconductor chip having a beam part of an improved strength and is high in sensitivity. CONSTITUTION:A piezoresistance layer is formed on a single crystal silicon chip 2 and the chip 2 is etched with an anisotropic etching liquid, such as a KOH aqueous solution or the like, using a silicon nitride film as a mask. Then, the chip 2 is dipped in an isotropic etching liquid for a prescribed time and an etching of a depth of 0.5 to 2.0mum is performed. Moreover, an isotropic etching is performed using a resist and a groove to reach a recessed part is formed. |
