| 摘要 |
PURPOSE:To increase the alignment margin of the word lines of a memory cell to bit contacts or the alignment margin of the word lines to capacitor contacts without increasing the size of the chip of a DRAM by a method wherein active regions are arranged at an inclination to the word lines. CONSTITUTION:Active regions 1 of a memory cell are arranged at an inclination of theta degree to the directions of word lines 3. For example, when the width LA of the regions 1 in the directions of bit lines is set in a width of 2mum and a matching margin (x) of the lines 3 to capacitor contacts 4 at the time when the angle theta of inclination of the regions 1 to the directions of the lines 3 is set at 45 deg. is calculated using x=[(1/sintheta)-1]XLAX1/2, a margin of about 0.4mum is increased compared with a conventional arrangement of the word lines 3. According to experiences, when the angle theta of inclination is set to satisfy 10 deg.<theta<80 deg., a good result is obtained. |
