| 摘要 |
<p>The stacked capacitor has a first electrode (3) with a fin structure formed on a semiconductor device and a second electrode (7) formed over the first electrode via a dielectric film (6). The first electrode consists of an electrically conductive material different from polycrystalline silicon and a polycrystalline silicon film (4) containing am impurity covering the electrically conductive material. According to this structure, the film thickness of the storage electrode of the fin capacitor can be reduced and corrugation of the surface of a memory device can be mitigated. <IMAGE></p> |
