Semiconductor sensor.

摘要

A semiconductor sensor has a plurality of field-effect transistors (2a....2n) disposed on a semiconductor substrate (4) at spaced intervals. The field-effect transistors have respective drains (D) electrically connected parallel to each other, respective sources (S) electrically connected parallel to each other, and gates (G) electrically connected to each other. While a gate bias voltage (VG) is being applied to each of the field-effect transistors, a stress applied to the semiconductor substrate is detected based on a change in a combined output of the field-effect transistors. A single comb-shaped field-effect transistor may be employed instead of the plurality of field-effect transistors. <IMAGE>