| 摘要 |
<p>A semiconductor storing device using ferroelectric substances in which, by forming an oxygen-nonpermeable conductive film (107) between a semiconductor substrate (101) and a ferroelectric capacitor, and by making the film (107) nonconductive through an oxidation treatment, oxygen is prevented from diffusing in subsequent heat treatment processes in oxidation atmosphere, and the characteristics of the elements under the oxygen-nonpermeable film can be prevented from deteriorating by oxygen. <IMAGE></p> |
