| 摘要 |
An LED having a broadband emission spectrum. In one embodiment, the LED comprises a layered semiconductor structure of length L, the structure including an active layer comprising multiple asymmetric quantum wells. A pair of stripe electrodes is formed on a surface of the structure, to thereby form at least one optical cavity having a pumped length less than L. Currents to the cavities are controlled as a function of temperature to produce broadband emission over a range of temperatures. |
