| 摘要 |
PURPOSE:To provide a light emitting device near an infrared region which uses a silicon group material. CONSTITUTION:The thin films of a germanium and silicon mixed crystal layer 2 and a silicon layer 3 are adapted to make a gradual epitaxial growth on a silicon substrate 1, thereby forming a super lattice structure 4. Heat treatment is applied after formation of the super lattice structure. Alternatively dislocation is produced on the silicon layer which has made an epitaxial growth by etching and reducing the silicon layer after having made a thick epitaxial growth. When voltage is applied to electrodes 6 and 7, electrons and holes are recoupled at a dislocated part produced on the silicon layer in super lattice structure and emits light in the wavelength region of 1.2 to 0.6mum. Since this is the super lattice structure, the light emission is very strong. It is possible to obtain a light emitting device near an infrared region by taking this light emission by way of a filter 8. |
